1、FRAM is non-volatile and can easily be read/written 10 trillion times. 2、It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer. 3、It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source. 4、The FRAM chip used provides 8 KB of memory, and USES a clock up to 20 MHz. 5、Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature. Features: FRAM is non-volatile and can easily be read/written 10 trillion times. It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer. The FRAM chip used provides 8 KB of memory, and USES a clock up to 20 MHz. Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature. Specification: Condition: Addr: 1010+A2+A1+A0 Default: 0 x 50 VCC/Logic: 2.7-5.5V Package List: 1 x FRAM Breakout Board Note: Due to the light and screen setting difference, the item's color may be slightly different from the pictures. Please allow slight dimension difference due to different manual measurement.