Description: 5 x IRF830 N-Channel MOSFET + 5 x 10N60 N-Channel MOSFET. IRF830 has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control. 10N60 has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge. IRF830 Drain Source Voltage: 500V; Drain Current: 5A. 10N60 Drain Source Voltage: 600V; Drain Current: 10A. Specification: IRF830: Mounting Hole Diameter: Approx. 3mm/0.12 inch Pin Size ( L x Pitch): Approx. 13x2mm/0.51x0.08 inch Total Size (L x W x H): Approx. 29x10x4mm/1.14x0.39x0.16 inch Package: TO-220AB 10N60: Mounting Hole Diameter: Approx. 3mm/0.12 inch Pin Size ( L x Pitch): Approx. 13x2mm/0.51x0.08 inch Total Size (L x W x H): Approx. 29x10x4mm/1.14x0.39x0.16 inch Package : TO-220F Package Includes: 5 Pieces IRF830 N-Channel MOSFET 5 Pieces 10N60 N-Channel MOSFET